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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

No customer reviews yet ISBN 9780367554156

This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.

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Pub dateSep 25, 2023
ISBN-100367554151
ISBN-139780367554156
LanguageEnglish
Last updated 2026-03-17 15:53
$74.10
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